| 1. Identity statement | ||||
| Reference Type | Conference Abstract (Conference Proceedings) | |||
| Site | mtc-m21b.sid.inpe.br | |||
| Holder Code | isadg {BR SPINPE} ibi 8JMKD3MGPCW/3DT298S | |||
| Identifier | 8JMKD3MGP3W34P/3PGF5LL | |||
| Repository | sid.inpe.br/mtc-m21b/2017/08.25.17.18 | |||
| Last Update | 2017:12.21.15.43.22 (UTC) simone | |||
| Metadata Repository | sid.inpe.br/mtc-m21b/2017/08.25.17.18.31 | |||
| Metadata Last Update | 2018:06.04.02.27.45 (UTC) administrator | |||
| Secondary Key | INPE--PRE/ | |||
| Citation Key | FornariRMCPPBRGA:2017:MoBeEp | |||
| Title | Molecular Beam Epitaxial Growth of the Topological Insulator Bi2Te3  | |||
| Year | 2017 | |||
| Access Date | 2024, May 18 | |||
| Secondary Type | PRE CN | |||
| Number of Files | 1 | |||
| Size | 1000 KiB | |||
| 2. Context | ||||
| Author | 1 Fornari, Celso Israel 2 Rappl, Paulo Henrique de Oliveira 3 Morelhão, Sérgio Luiz 4 Chitta, Walmir A. 5 Peres, Marcelos Lima 6 Peixoto, Thiago R. F. 7 Bentmann, Hendrik 8 Reinert, Friedrich 9 Gratens, Xavier P. M. 10 Abramof, Eduardo | |||
| Resume Identifier | 1 2 8JMKD3MGP5W/3C9JJ37 3 4 5 6 7 8 9 10 8JMKD3MGP5W/3C9JGUH | |||
| Group | 1 CMS-ETES-SESPG-INPE-MCTIC-GOV-BR 2 LABAS-COCTE-INPE-MCTIC-GOV-BR 3 4 5 6 7 8 9 10 LABAS-COCTE-INPE-MCTIC-GOV-BR | |||
| Affiliation | 1 Instituto Nacional de Pesquisas Espaciais (INPE) 2 Instituto Nacional de Pesquisas Espaciais (INPE) 3 4 5 6 7 8 9 10 Instituto Nacional de Pesquisas Espaciais (INPE) | |||
| Author e-Mail Address | 1 celso.fornari@inpe.br 2 paulo.rappl@inpe.br 3 4 5 6 7 8 9 10 eduardo.abramof@inpe.br | |||
| Conference Name | Brazilian Workshop on Semiconductor Physics, 18 (BWSP) | |||
| Conference Location | Maresias, SP | |||
| Date | 14-18 ago. | |||
| Book Title | Resumos | |||
| History (UTC) | 2017-08-25 17:18:59 :: simone -> administrator :: 2017 2018-01-09 11:47:06 :: administrator -> simone :: 2017 2018-01-09 18:25:24 :: simone -> administrator :: 2017 2018-06-04 02:27:45 :: administrator -> simone :: 2017 | |||
| 3. Content and structure | ||||
| Is the master or a copy? | is the master | |||
| Content Stage | completed | |||
| Transferable | 1 | |||
| Content Type | External Contribution | |||
| Version Type | publisher | |||
| Abstract | Bismuth telluride has been recently established as a simple model system for the threedimensional topological insulator with a single Dirac cone on the surface, as determined experimentally from angle-resolved photoemission spectroscopy [1]. The conductivity measurement of the metallic surface states in Bi2Te3 is hindered by the bulk conductivity due to intrinsic defects, like vacancies and anti-sites. Counter doping (Ca, Sn or Pb) is a way to control the Fermi level and suppress the bulk contribution. Intrinsic conduction through topological surface states has been also obtained in very thin insulating Bi2Te3 epitaxial films [2]. The small lattice mismatch (< 0.04 %) to bismuth telluride makes BaF2 (111) a suitable substrate to grow high-quality thin films. The molecular beam epitaxial (MBE) growth of Bi2Te3 layers on BaF2 (111) has recently been reported using either separate Bi and Te solid sources [2] or Bi2Te3 and additional Te cells [3]. Depending on the growth parameters, other BixTey phases are obtained or mixed BixTey phases coexist in the same epitaxial film [4]. In this work, we report on a systematic study of the MBE growth of bismuth telluride films on BaF2 (111). The substrate temperature, the Bi2Te3 source temperature and the additional Te flux were varied in a wide range to determine the optimum growth conditions for Bi2Te3 single phase films. The structural properties of the films were investigated in situ by reflection high-energy electron diffraction and ex situ by high-resolution x-ray diffraction, x-ray reflectivity, atomic force microscopy (AFM), X ray photoelectron Spectroscopy (XPS) and Angle Resolved Photoelectron Spectroscopy (ARPES). [1] Y.L. Chen et al., Science 325, 178 (2009); [2] K. Hoefer et al., PNAS 111, 14979 (2014); [3] O. Caha et al., Cryst. Growth Des. 13, 3365 (2013); [4] H. Steiner et al., J. Appl. Cryt. 47, 1889 (2014). | |||
| Area | FISMAT | |||
| Arrangement 1 | urlib.net > BDMCI > Fonds > Produção anterior à 2021 > LABAS > Molecular Beam Epitaxial... | |||
| Arrangement 2 | urlib.net > BDMCI > Fonds > Produção pgr ATUAIS > CMS > Molecular Beam Epitaxial... | |||
| doc Directory Content | access | |||
| source Directory Content | there are no files | |||
| agreement Directory Content |
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| 4. Conditions of access and use | ||||
| data URL | http://mtc-m21b.sid.inpe.br/ibi/8JMKD3MGP3W34P/3PGF5LL | |||
| zipped data URL | http://mtc-m21b.sid.inpe.br/zip/8JMKD3MGP3W34P/3PGF5LL | |||
| Language | en | |||
| Target File | Abramof_molecular.pdf | |||
| User Group | self-uploading-INPE-MCTI-GOV-BR simone | |||
| Reader Group | administrator simone | |||
| Visibility | shown | |||
| Read Permission | allow from all | |||
| Update Permission | not transferred | |||
| 5. Allied materials | ||||
| Linking | 8JMKD3MGP3W34P/3NAEMRH | |||
| Next Higher Units | 8JMKD3MGPCW/3ESR3H2 8JMKD3MGPCW/3F358GL | |||
| Citing Item List | sid.inpe.br/mtc-m21/2012/07.13.14.44.57 3 sid.inpe.br/mtc-m21/2012/07.13.14.57.50 2 sid.inpe.br/bibdigital/2013/10.14.21.39 1 | |||
| Host Collection | sid.inpe.br/mtc-m21b/2013/09.26.14.25.20 | |||
| 6. Notes | ||||
| Empty Fields | archivingpolicy archivist callnumber copyholder copyright creatorhistory descriptionlevel dissemination doi e-mailaddress edition editor format isbn issn keywords label lineage mark mirrorrepository nextedition notes numberofvolumes orcid organization pages parameterlist parentrepositories previousedition previouslowerunit progress project publisher publisheraddress rightsholder schedulinginformation secondarydate secondarymark serieseditor session shorttitle sponsor subject tertiarytype type url volume | |||
| 7. Description control | ||||
| e-Mail (login) | simone | |||
| update | ||||